AOD604

www.DataSheet4U.com AOD604 Complementary Enhancement Mode Field Effect Transistor General Description The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD604 is Pbfree (meets ROHS & Sony 259 specifications). AOD604L is a Green Product ordering option. AOD604 and AOD604L are electrically identical. TO-252 D-PAK Features n-channel p-channel -40V VDS (V) = 40V ID = 8A (V GS=10V) -8A (V GS = -10V) RDS(ON) RDS(ON) < 33 m Ω (VGS=10V) < 50 m Ω (VGS = -10V) < 70 m Ω (VGS = -4.5V) < 47 m Ω (VGS=4.5V) D2 D1 Top View Drain Connected to Tab G2 S2 G1 S1 n-channel S1 G1 D1/D2 G2 S2 p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 V Gate-Source Voltage ±20 GS Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Max p-channel -40 ±20 8 8 -30 -8 30 50 25 2.5 1.6 -55 to 175 Typ 17.4 50 4 16.7 40 2.5 Max 30 60 7.5 25 50 3 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TC=25°C 8 8 30 8 20 20 10 2 1.3 -55 to 175 Symbol RθJA RθJC RθJA RθJC Device n-ch n-ch n-ch p-ch p-ch p-ch Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A ...