AOD607

www.DataSheet4U.com AOD607 Complementary Enhancement Mode Field Effect Transistor General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a Green Product ordering option. AOD607 and AOD607L are electrically identical. TO-252-4L D-PAK D1/D2 Features n-channel p-channel -30V VDS (V) = 30V ID = 12A (V GS=10V) -12A (V GS = -10V) RDS(ON) RDS(ON) < 25 m Ω (VGS=10V) < 37 m Ω (VGS = -10V) < 62 m Ω (VGS = -4.5V) < 34 m Ω (VGS=4.5V) D1/D2 Top View Drain Connected to Tab G1 S1 G2 S2 n-channel S1 G1 S2 G2 p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Max p-channel -30 ±20 -12 -12 -40 -18 40 25 12.5 2.1 1.3 -55 to 175 Typ 19 47 4.5 19 47 4.5 Max 23 60 6 23 60 6 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TC=25°C 12 12 40 18 40 25 12.5 2.1 1.3 -55 to 175 Symbol RθJA RθJC RθJA RθJC Device n-ch n-ch n-ch p-ch p-ch p-ch Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-...