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BUK9735-55A
N-channel TrenchMOS™ logic level FET
M3D308
Rev. 02 — 10 June 2004
Product data
1. D...
www.DataSheet4U.com
BUK9735-55A
N-channel TrenchMOS™ logic level FET
M3D308
Rev. 02 — 10 June 2004
Product data
1. Description
N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9735-55A in SOT186A (TO-220F).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible.
3. Applications
s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT186A, simplified outline and symbol Description gate (g)
mb
Simplified outline
Symbol
drain (d) source (s) mounting base; isolated
g
mbb076
d
s
1 2 3
MBK110
SOT186A (TO-220F)
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
BUK9735-55A
N-channel TrenchMOS™ logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 20 A Tj = 25 °C; VGS = 4.5 V; ID = 20 A Typ 29 Max 55 20 25 150 35 37 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate ...