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FDD4685 Datasheet, Equivalent, PowerTrench MOSFET.P-Channel PowerTrench MOSFET P-Channel PowerTrench MOSFET |
| Part | FDD4685 |
|---|---|
| Description | P-Channel PowerTrench MOSFET |
| Feature | www. DataSheet4U. com FDD4685 40V P-Chann el PowerTrench® MOSFET October 2006 FDD4685 40V P-Channel PowerTrench® MOS FET –40V, –32A, 27mΩ Features Gen eral Description This P-Channel MOSFET has been produced using Fairchild Semic onductor’s proprietary PowerTrench® technology to deliver low rDS(on) and g ood switching characteristic offering s uperior performance in application. Max rDS(on) = 27mΩ at VGS = –10V, I D = –8. 4A Max rDS(on) = 35mΩ at VGS = –4. 5V, ID = –7A High perfo rmance trench technology for extremely low rDS(on) RoHS Compliant tm Appl ication Inverter Power Supplies S G . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part | FDD4685 |
|---|---|
| Description | P-Channel PowerTrench MOSFET |
| Feature | www. DataSheet4U. com FDD4685 40V P-Chann el PowerTrench® MOSFET October 2006 FDD4685 40V P-Channel PowerTrench® MOS FET –40V, –32A, 27mΩ Features Gen eral Description This P-Channel MOSFET has been produced using Fairchild Semic onductor’s proprietary PowerTrench® technology to deliver low rDS(on) and g ood switching characteristic offering s uperior performance in application. Max rDS(on) = 27mΩ at VGS = –10V, I D = –8. 4A Max rDS(on) = 35mΩ at VGS = –4. 5V, ID = –7A High perfo rmance trench technology for extremely low rDS(on) RoHS Compliant tm Appl ication Inverter Power Supplies S G . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
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