FDD4685 40V P-Channel PowerTrench® MOSFET
March 2015
FDD4685 40V P-Channel PowerTrench® MOSFET
–40V, –32A, 27mΩ
Features
General Description
Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A High performance trench technology for extremely low rDS(on) RoHS Compliant
This P-Channel MOSFET has been produced...
