FDU8770

FDD8770/FDU8770 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8770/FDU8770 N-Channel PowerTrench® MOSFET 25V, 35A, 4.0mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application Features „ Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A „ Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V „ Low gate resistance „ RoHS Compliant AD FREE I LE „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D G DS I-PAK S G (TO-251AA) Short Lead I-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous (Package Limited) ID -Continuous (Die Limited) -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics (Note 1) (Note 2) RθJC Thermal Resistance, Junction to Case TO-252,TO-251 RθJA RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area Package Marking and Ordering Information Device Marking FDD8770 FDU8770 FDU8770 Device FDD8770 FDU8770 FDU8770_F071 Package TO-252AA TO-251AA TO-251AA Reel Size...