FDD8778

FDD8778/FDU8778 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8778/FDU8778 N-Channel PowerTrench® MOSFET 25V, 35A, 14mΩ Features General Description „ Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V „ Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ RoHS compliant AD FREE I Application LE „ DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D G G DS I-PAK S (TO-251AA) Short Lead I-PAK S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous (Package Limited) ID -Continuous (Die Limited) -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics (Note 1) (Note 2) RθJC Thermal Resistance, Junction to Case TO-252,TO-251 RθJA RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area Package Marking and Ordering Information Device Marking FDD8778 FDU8778 FDU8778 Device FDD8778 FDU8778 FDU8778_F071 Package TO-252AA TO-251AA TO-251AA Reel Siz...