PowerTrench MOSFET. FDD8796 Datasheet

FDD8796 Datasheet PDF, Equivalent


Part Number

FDD8796

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDD8796 Datasheet PDF


FDD8796 Datasheet
www.DataSheet4U.com
March 2006
FDD8796/FDU8796
N-Channel PowerTrench® MOSFET
25V, 35A, 5.7m
AD FREE I
General Description
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
„ Max rDS(on) = 5.7mat VGS = 10V, ID = 35A
„ Max rDS(on) = 8.0mat VGS = 4.5V, ID = 35A
„ Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
„ Low gate resistance
Application
„ Avalanche rated and 100% tested
„ Vcore DC-DC for Desktop Computers and Servers
„ RoHS Compliant
„ VRM for Intermediate Bus Architecture
D
G DS
I-PAK
(TO-251AA)
G
D
S
Short Lead I-PAK
G
S
MOSFET Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID -Continuous (Die Limited)
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
Ratings
25
±20
35
98
305
91
88
-55 to 175
Units
V
V
A
mJ
W
°C
RθJC
Thermal Resistance, Junction to Case TO_252, TO_251
RθJA
RθJA
Thermal Resistance, Junction to Ambient TO_252, TO_251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information
1.7
100
52
°C/W
°C/W
°C/W
Device Marking
FDD8796
FDU8796
FDU8796
Device
FDD8796
FDU8796
FDU8796_F071
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
N/A (Tube)
N/A (Tube)
Tape Width
12mm
N/A
N/A
Quantity
2500 units
75 units
75 units
©2006 Fairchild Semiconductor Corporation
FDD8796/FDU8796 Rev. B
1
www.fairchildsemi.com

FDD8796 Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250µA, VGS = 0V
ID = 250µA, referenced to
25°C
VDS = 20V
VGS = 0V
VGS = ±20V
TJ = 150°C
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250µA
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 35A
VDS = 10V, ID = 35A
TJ = 175°C
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics
VDS = 13V, VGS = 0V,
f = 1MHz
f = 1MHz
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain Charge
Drain-Source Diode Characteristics
VDD =13V, ID = 35A
VGS = 10V, RGS = 20
VGS = 0 to10V
VGS = 0 to 5V
VDD =13V,
ID = 35A,
Ig = 1.0mA
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V.
VGS = 0V, IS = 35A
VGS = 0V, IS = 15A
IF = 35A, di/dt = 100A/µs
IF = 35A, di/dt = 100A/µs
Min
25
1.2
Typ
7
1.8
-6.7
4.5
6.0
6.9
1960
455
315
1.1
10
24
99
57
37
19
6
6
0.9
0.8
30
23
Max Units
1
250
±100
V
mV/°C
µA
nA
2.5 V
mV/°C
5.7
8.0 m
9.5
2610
605
475
pF
pF
pF
20 ns
39 ns
158 ns
91 ns
52 nC
27 nC
nC
nC
1.25 V
1.0 V
45 ns
35 nC
FDD8796/FDU8796 Rev. B
2 www.fairchildsemi.com


Features Datasheet pdf www.DataSheet4U.com FDD8796/FDU8796 N-C hannel PowerTrench® MOSFET March 2006 FDD8796/FDU8796 N-Channel PowerTrench ® MOSFET 25V, 35A, 5.7mΩ General Des cription This N-Channel MOSFET has been designed specifically to improve the o verall efficiency of DC/DC converters u sing either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS (on) and fast switching speed. Feature s „ Max rDS(on) = 5.7mΩ at VGS = 10V , ID = 35A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A „ Low gate charge : Qg(10) = 37nC(Typ), VGS = 10V „ Low gate resistance Application „ Vcore D C-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architectur e „ Avalanche rated and 100% tested RoHS Compliant LE A REE I DF D M ENTATIO LE N MP G D G D S I-PAK (TO-2 51AA) S Short Lead I-PAK G S MOSFET M aximum Ratings TC= 25°C unless otherwi se noted Symbol VDS VGS ID EAS PD TJ, T STG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Cont.
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