MA27V02

www.DataSheet4U.com Variable Capacitance Diodes MA27V02 Silicon epitaxial planar type Unit: mm For VCO ■ Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.15 min. 5˚ 0 to 0.01 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance * Conditions VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 4 V, f = 470 MHz Min Typ Max 10 18.0 7.3 2.1 20.0 9.0 2.6 0.3 CD(1V) /CD(4V) rD 0.15 max. 0.52±0.03 0.15 min. Unit nA pF  Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Publication date: March 2004 SKD00055BED 1 MA27V02 IF  VF 102 CD  VR 25°C f = 1 MHz Ta = 25°C CD  Ta 1.032 f = 1 MHz 160 Diode capacitance CD (pF) Forward current IF (mA) 80 Ta = 60°C −40°C 10 CD (Ta) CD (Ta = 25°C) 120 1.016 VR = 1 V 4V 1.000 40 0 1 ...