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MA27V11 Dataheets PDF



Part Number MA27V11
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA27V11 DatasheetMA27V11 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA27V11 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • High frequency type by this low capacitance • Ultraminiature Package 1.0 mm × 0.6 mm (height: 0.52 mm), optimum for high-density mounting and high-speed mounting 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 5˚ Parameter Reverse voltage Junction temperature Storage temperature Symbol VR T.

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www.DataSheet4U.com Variable Capacitance Diodes MA27V11 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • High frequency type by this low capacitance • Ultraminiature Package 1.0 mm × 0.6 mm (height: 0.52 mm), optimum for high-density mounting and high-speed mounting 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 5˚ Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 8 125 −55 to +125 Unit V °C °C 0 to 0.01 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance * Conditions VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 4 V, f = 470 MHz Min Typ Max 10 2.77 1.23 2.16 3.01 1.34 2.34 0.35 CD(1V) /CD(4V) rD 0.15 max. 0.52±0.03 ■ Absolute Maximum Ratings Ta = 25°C 0.15 min. 5˚ 0.15 min. Unit nA pF  Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Publication date: March 2004 SKD00059BED 1 MA27V11 IF  VF 160 CD  VR 10 f = 1 MHz Ta = 25°C f = 1 MHz 1.026 CD  Ta VR = 1 V Forward current IF (mA) 120 25°C Ta = 60°C Diode capacitance CD (pF) 80 1 CD (Ta) CD (Ta = 25°C) 1.016 1.006 4V 40 −40°C 0.996 0 10 −1 0 0.4 0.8 1.2 0 10 20 0.986 0 20 40 60 80 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR  T a 103 VR = 5 V Reverse current IR (nA) 102 10 1 0 10 20 30 Ambient temperature Ta (°C) 2 SKD00059BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applicati.


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