MA27V15

www.DataSheet4U.com Variable Capacitance Diodes MA27V15 Silicon epitaxial planar type Unit: mm For VCO ■ Features Ultraminiature Package 1.0 mm × 0.6 mm (height: 0.52 mm), optimum for high-density mounting and high-speed mounting Good linearity and large capacitance-ratio in CD − VR relation 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C 5˚ 0.15 min. 5˚ 0 to 0.01 °C 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: J ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD0.5V CD2.5V Capacitance ratio Series resistance * Conditions VR = 5 V VR = 0.5 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 1 V, f = 470 MHz Min Typ Max 10 7.30 2.98 2.35 7.91 3.23 2.55 0.45 CD0.5V /CD2.5V rD Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15 max. 0.52±0.03 0.15 min. Unit nA pF  Ω Publication date: November 2003 SKD00053BED 1 MA27V15 IF  V F 120 102 CD  VR f = 1 MHz Ta = 25°C 1.044 1.036 1.028 f = 1 MHz CD  Ta 100 Diode capacitance CD (pF) Forward current IF (mA) Ta = 60°C 80 25°C 60 −40°C VR = 0.5 V CD (Ta) CD (Ta = 25 °C) 1.020 1.012 2.5 V 1.0...