TPCF8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8201
Notebook PC Applications Porta...
TPCF8201
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8201
Notebook PC Applications Portable Equipment Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD (1)
PD (2)
PD (1)
PD (2) EAS IAR
EAR
Tch Tstg
20
V
20
V
±12
V
3 A
12
1.35
1.12 W
0.53
0.33
1.46
mJ
1.5
A
0.11
mJ
150
°C
−55 to 150 °C
JEDEC
―
JEITA
―
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
8
7
6
5
Note: For Notes 1 to 5, refer to the next page.
1
2
3
4
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant ch...