BUK9775-55A

www.DataSheet4U.com BUK9775-55A N-channel TrenchMOS™ logic level FET M3D308 Rev. 02 — 10 June 2004 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9775-55A in SOT186A (TO-220F). 2. Features s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; isolated g mbb076 d s 1 2 3 MBK110 SOT186A (TO-220F) 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors BUK9775-55A N-channel TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 10 A Tj = 25 °C; VGS = 4.5 V; ID = 10 A Typ 63 Max 55 11 18 150 75 84 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate ...