CYTA4494D

www.DataSheet4U.com CYTA4494D SURFACE MOUNT DUAL, ISOLATED COMPLEMENTARY NPN & PNP HIGH VOLTAGE SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA4494D type consists of one (1) NPN high voltage silicon transistor and one (1) complementary PNP high voltage silicon transistor packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini™ device is ideal for high voltage applications. MARKING CODE: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W SYMBOL VCBO VCEO VEBO IC PD NPN (Q1) 450 400 6.0 300 2.0 PNP (Q2) 400 400 6.0 300 2.0 UNITS V V V mA W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL ICBO ICES ICBO ICES IEBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE TEST CONDITIONS VCB=350V VCE=350V VCB=400V VCE=400V VBE=4.0V IC=100µA IC=100µA IC=1.0mA IE=10µA IC=1.0mA, IB=0.1mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA NPN (Q1) MIN MAX PNP (Q2) MIN MAX 100 500 UNITS nA nA nA nA nA V V V V V V V V 100 500 100 450 450 400 6.0 0.40 0.50 0.75 0.75 40 50 45 20 200 40 50 45 20 400 400 400 6.0 100 0.40 0.50 0.75 0.75 200 R1 (1...