CTN638

www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier. E B C 1 = COLLECTOR 2 = BASE 3 = EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Peak Base Current – Continuous Peak Power Dissipation @ Ta=25ºC Derate above 25°C Power Dissipation @ Tc=25ºC Derate above 25°C Operating And Storage Junction Temperature Range Symbol C T N 6 3 5 C T N 6 3 7 C T N 6 3 9 CTN636 CTN638 CTN640 VCBO VCEO VEBO IC ICM IB IBM PD PD Tj ,Tstg 45 45 60 60 5 1 1.5 100 200 750 6 2.5 20 –55 to +150 100 80 - Units V V V A A mA mA mW mW/°C W mW/°C ºC Continental Device India Limited Data Sheet Page 1 of 4 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified) Characteristic Collector-Emitter Voltage IC=10mA, IB =0 Collector-Base Voltage IC=100µA, I E=0 Emitter-Base Voltage IE=10µA, IC=0 Collector Cutoff Current VCB =30V, IE =0 VCB =30V, IE =0, Ta=125°C Base Emitter On Voltage IC=500mA, V CE=2V Collector-Emitter (Sat) Voltage IC=500mA, IB =50mA D.C. Current Gain IC=5mA, VCE=2V IC=150mA, VCE=2V* IC=500mA, VCE=2V* DYNAMIC CHARACTERIST...