NP0G3D2

www.DataSheet4U.com Transistors with built-in Resistor NP0G3D2 Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor (Tr2) Unit: mm For digital circuits 0.12+0.03 -0.02 6 5 4 0.80±0.05 (0.35) (0.35) 1.00±0.05 ■ Basic Part Number of Element UNR31AT × UNR32AL Display at No.1 lead 0.10 Two elements incorporated into one package Suitable for high density package and downsizing of the equipment Automatic insertion with the taping is possible 1.00±0.05 ■ Features 0 to 0.02 1 2 3 0.10 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector to base voltage Collector to emitter voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Collector current Overall Total power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating −50 −50 −80 50 50 80 125 125 −55 to +125 Unit V V mA V V mA mW °C °C 1: Base (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) 0.37+0.03 -0.02 4: Collector (Tr2) 5: Emitter (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 3B Internal Connection 6 Tr1 Tr2 5 4 Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm 1 2 3 (0.10) Publication date: July 2002 SJH00051AED 1 NP0G3D2 ■ Electrical Characteristics Ta = 25°C ± 3°C Tr1 Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter sat...