AO3703

www.DataSheet4U.com AO3703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3703 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO3703 is Pb-free (meets ROHS & Sony 259 specifications). AO3703L is a Green Product ordering option. AO3703 and AO3703L are electrically identical. Features VDS (V) = -20V ID = -2.7 A (VGS = -10V) RDS(ON) < 97m Ω (VGS = -4.5V) RDS(ON) < 130m Ω (VGS = -2.5V) RDS(ON) < 190m Ω (VGS = -1.8V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<[email protected] SOT-23-5 Top View G S A 1 2 3 5 4 D K G D K S A Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Continuous Drain Current A TA=70°C IDM Pulsed Drain Current B VKA Schottky reverse voltage TA=25°C IF Continuous Forward Current A TA=70°C IFM Pulsed Forward Current B Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C A MOSFET -20 ±8 -2.7 -2.1 -10 Schottky Units V V A TA=25°C TA=70°C PD TJ, TSTG Symbol RθJA RθJL 1.14 0.72 -55 to 150 Typ 80.3 117 58.5 20 2 1 10 0.92 0.59 -55 to 150 Max 110 150 80 V A W °C Units °C/W Steady-State Steady-State Alpha & Om...