AOL1401

www.DataSheet4U.com AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AOL1401 is Pbfree (meets ROHS & Sony 259 specifications). AOL1401L is a Green Product ordering option. AOL1401 and AOL1401L are electrically identical. Ultra SO-8TM Top View Fits SOIC8 footprint ! D Features VDS (V) = -38V ID = -85A RDS(ON) < 8.5mΩ (VGS = -10V) RDS(ON) < 10mΩ (VGS = -4.5V) ESD Rating: 3000V HBM D Bottom tab connected to drain G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current G Power Dissipation B Power Dissipation A C Maximum -38 ±25 -85 -62 -120 -12 -9 100 50 2.1 1.3 -55 to 175 Units V V TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C IDSM PD PDSM TJ, TSTG ID IDM A W W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 21 48 1 Max 25 60 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOL1401 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Sym...