AOL1412

www.DataSheet4U.com AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM TM General Description SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1412 is Pb-free (meets ROHS & Sony 259 specifications). AOL1412L is a Green Product ordering option. AOL1412 and AOL1412L are electrically identical. Ultra SO-8 TM Features VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 3.9mΩ (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Top View D Fits SOIC8 footprint ! G S Bottom tab connected to drain G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A Maximum 30 ±12 85 84 200 27 21 40 240 100 50 5 3 -55 to 175 Units V V A TC=25°C I TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t ≤ 10s Stead...