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AOL1412 N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
TM
General Description
SRFET...
www.DataSheet4U.com
AOL1412 N-Channel Enhancement Mode Field Effect
Transistor
SRFET
TM
TM
General Description
SRFET AOL1412 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1412 is Pb-free (meets ROHS & Sony 259 specifications). AOL1412L is a Green Product ordering option. AOL1412 and AOL1412L are electrically identical. Ultra SO-8
TM
Features
VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 3.9mΩ (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 4.5V)
UIS Tested Rg,Ciss,Coss,Crss Tested
D SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode S
Top View D
Fits SOIC8 footprint !
G
S
Bottom tab connected to drain G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation
A
Maximum 30 ±12 85 84 200 27 21 40 240 100 50 5 3 -55 to 175
Units V V A
TC=25°C
I
TC=100°C TA=25°C TA=70°C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W °C
TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case
Symbol t ≤ 10s Stead...