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AOL1418 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1418 uses adv...
www.DataSheet4U.com
AOL1418 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOL1418 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1418 is Pb-free (meets ROHS & Sony 259 specifications). AOL1418L is a Green Product ordering option. AOL1418 and AOL1418L are electrically identical. Ultra SO-8TM Top View D
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V)
Fits SOIC8 footprint !
D
Bottom tab connected to drain
G S
S
G
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C G TC=100°C ID IDM IDSM IAR
C
Maximum 30 ±20 85 70 200 15 12 30 135 100 50 2.5 1.6 -55 to 175
Units V V
Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C Avalanche Current C Repetitive avalanche energy L=0.3mH Power Dissipation Power Dissipation
B
A
A mJ W W °C
EAR PD PDSM TJ, TSTG
TC=25°C TC=100°C TA=25°C TA=70°C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C
Symbol
A A
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 19.5 48 1
Max 25 60 1.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOL1418
Electrical Characte...