AOL1434

www.DataSheet4U.com AOL1434 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOL1434 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6.3 mΩ (VGS = 10V) RDS(ON) < 10 mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D Fits SOIC8 footprint ! D S Bottom tab connected to drain G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 25 20 50 34 150 22 17 30 135 38 13 5 3 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C IDSM IAR EAR PD PDSM TJ, TSTG B ID IDM A A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 18 49 2.5 Max 25 60 4 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1434 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Condit...