AOL1440

www.DataSheet4U.com AOL1440 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1440 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1440 is Pb-free (meets ROHS & Sony 259 specifications). AOL1440L is a Green Product ordering option. AOL1440 and AOL1440L are electrically identical. Features Features V V (V)= =25V 25V DS DS (V) =75A 75A(V (V =10V) 10V) II D D= GS GS = < < 3.2m 3.2m Ω Ω (V (V =20V) 20V) R R DS(ON) DS(ON) GS GS = <4.0m 4.0mW (V 10V) R R Ω (V ==12V) DS(ON) < GS DS(ON) GS < 5.2mW (V = 12V) R < 5.2m Ω (V = 10V) R DS(ON) GS DS(ON) GS UISTested Tested UIS Rg,Ciss,Coss,CrssTested Tested Rg,Ciss,Coss,Crss Ultra SO-8TM Top View D Fits SOIC8 footprint ! D S Bottom tab connected to drain G G S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage 25 VDS ±30 Gate-Source Voltage VGS Continuous Drain Current B,G, Pulsed Drain Current Continuous Drain G Current Avalanche Current C C Units V V A TC=25°C G B 85 ID IDM IDSM IAR 66 200 25 20 30 135 75 37 5 3 -55 to 175 Symbol RθJA RθJC Typ 19 45 1.5 Max 25 55 2 TC=100°C TA=25°C TA=70°C A A mJ W W °C Units °C/W °C/W °C/W Repetitive avalanche energy L=0.3mH EAR TC=25°C PD Power Dissipation B TC=100°C TA=25°C PDSM A Power Dissipation TA=70°C Junction and Storage Temp...