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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176Ω (Typ.)
IRLS520A
BVDSS = 100 V RDS(on) = 0.22Ω ID = 7.2 A
TO-220F
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1.Gate 2. Drai...
