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MJE13007F
MJE13007F
High Voltage Switch Mode Application
• High Speed Switching • Suitable for Swi...
www.DataSheet4U.com
MJE13007F
MJE13007F
High Voltage Switch Mode Application
High Speed Switching Suitable for Switching
Regulator and Motor Control
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 40 150 - 65 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO IEBO hFE VCE(sat) Parameter Collector-Base Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 5A IB1 = - IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 400 Typ. Max. 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA
VBE(sat) Cob fT tON tSTG tF
Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE13007F
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATI...