NAND04GW3B2A

www.DataSheet4U.com NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary ■ High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications NAND Interface – x8 bus width – Multiplexed Address/ Data Supply voltage – 3.0V device: VDD = 2.7 to 3.6V Page size – (2048 + 64 spare) Bytes Block size – (128K + 4K spare) Bytes Page Read/Program – Random access: 25µs (max) – Sequential access: 30ns (min) – Page program time: 200µs (typ) Copy Back Program mode – Fast page copy without external buffering Cache Program and Cache Read modes – Internal Cache Register to improve the program and read throughputs Fast Block Erase – Block erase time: 2ms (typ) Status Register Electronic Signature Chip Enable ‘don’t care’ – for simple interface with microcontroller Serial Number option ■ ■ ■ ■ TSOP48 12 x 20mm ■ ■ ■ ■ Data protection – Hardware and Software Block Locking – Hardware Program/Erase locked during Power transitions Data integrity – 100,000 Program/Erase cycles – 10 years Data Retention ECOPACK® package Development tools – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models ■ ■ ■ ■ ■ ■ ■ ■ May 2006 Rev 2 1/58 www.st.com 1 This is preliminary information on a new product now in development or underg...