XN01504

www.DataSheet4U.com Composite Transistors XN01504 (XN1504) Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 4 5 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 I Features G G 10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1 I Basic Part Number of Element G 2SD1915F × 2 elements I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 50 20 25 300 500 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini5-G1 Pakage Marking Symbol: 5S Internal Connection 5 4 3 2 Tr1 1 Tr2 I Electrical Characteristics Parameter Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance ON Resistance *1 *2 (Ta=25˚C) Symbol VCEO ICBO IEBO hFE hFE (small/large)*1 VCE(sat) VBE fT Cob Ron*2 1kΩ IB=1mA f=1kHz V=0.3V Conditions IC = 1mA, IB = 0 VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 2V, IC = 4mA VCB = 6V, IE = –4mA, f = 200MHz VCB = 10V...