2SD2696

www.DataSheet4U.com 2SD2696 Transistors Low frequency transistor (for amplification) 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) VMT3 zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low. VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA (1) Base (2) Emitter (3) Collector (3) 0.2 0.22 (1)(2) 0.8 1.2 0.4 0.4 0.8 0.13 0.5 Abbreviated symbol : UH zApplications Switching zPackaging specifications Package Type 2SD2696 Code Basic ordering unit (pieces) Taping T2L 8000 zInner circuit (3) Collector (1) Base zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP ∗1 PD ∗2 Tj Tstg Limits 30 30 6 400 800 150 150 −55 to +150 Unit V V V mA mA mW / TOTAL °C °C 0.2 1.2 0.32 (2) Emitter ∗1 Pw=10ms, Single pulse ∗2 Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Parameter Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Min. 30 30 6 − − − 270 − − Typ. − − − − − 120 − 400 3.0 M...