Document
HiPerFRED
High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode
Part number
DSEC30-06A
1
2
3
DSEC30-06A
VRRM I FAV t rr
= 600 V = 2x 15 A = 35 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces:
- Power dissipation within the diode - Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency switching devices
● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power
supplies (SMPS) ● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131120b
DSEC30-06A
Fast Diode
Symbol VRSM VRRM IR VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current forward voltage drop
average forward current
VR = 600 V VR = 600 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A TC = 140°C rectangular
d = 0.5
VF0 rF R thJC R thCH Ptot I FSM CJ I RM
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current junction capacitance max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V VR = 400 V f = 1 MHz
t rr
reverse recovery time
IF = 15 A; VR = 300 V -diF/dt = 200 A/µs
EAS
non-repetitive avalanche energy
IAS = 1 A L = 180 µH
IAR
repetitive avalanche current
VA = 1.5·VR typ.: f = 10 kHz
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
Ratings
min. typ. max. Unit 600 V 600 V 100 µA 0.5 mA 2.03 V 2.24 V 1.34 V 1.57 V 15 A
TVJ = 175°C
TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100 °C TVJ = 25 °C TVJ = 100 °C TVJ = 25°C
0.25
12 5 7
35 95
0.99 V 14.3 mΩ
1.6 K/W K/W
95 W 110 A
pF A A ns ns 0.1 mJ 0.1 A
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131120b
Package TO-247
Symbol I RMS TVJ T op Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage temperature
MD
mounting torque
F C
mounting force with clip
Product Marking
Conditions
per terminal 1)
Logo Part No. Assembly Line
Assembly Code Date Code
IXYS
XXXXXXXXX Zyyww abcd
DSEC30-06A
Ratings
min. typ. max. Unit
50 A
-55
175 °C
-55
150 °C
-55
150 °C
6
g
0.8
1.2 Nm
20
120 N
Ordering Standard
Part Number DSEC30-06A
Marking on Product DSEC30-06A
Delivery Mode Tube
Quantity Code No.
30
473502
Similar Part DSEC30-06B DSEC29-06AC
Package TO-247AD (3) ISOPLUS220AB (3)
Voltage class 600 600
Equivalent Circuits for Simulation
I V0
R0
V 0 max R0 max
threshold voltage slope resistance *
Fast Diode
0.99
11.7
* on die level
T VJ = 175 °C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131120b
DSEC30-06A
Outlines TO-247
E
Q
A A2
ØP
S
D 2x E2
123
L1
L
2x b2 b4 2x e
3x b
C
A1
Ø P1 D2
D1
4
E1
Sym.
A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1
Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216
0.215 BSC 0.780 0.800
- 0.177 0.140 0.144 0.212 0.244
0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 -
- 0.29
Millimeter
min. max.
4.70 5.30
2.21 2.59
1.50 2.49
20.79 21.45
15.48 16.24
4.31 5.48
5.46 BSC
19.80 20.30
- 4.49
3.55 3.65
5.38 6.19
6.14 BSC
0.99 1.40
1.65 2.39
2.59 3.43
0.38 0.89
13.07 -
0.51 1.35
13.45
-
- 7.39
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131120b
DSEC30-06A
Fast Diode
40
30
IF 20
[A]
10
TVJ = 150°C 100°C 25°C
2000
TVJ = 100°C VR = 300 V
1500
Qr 1000
[μC]
500
IF = 30A 15 A 7.5 A
40 TVJ = 100°C VR = 300 V
30
IRM 20
[A]
IF = 30A 15 A 7.5 A
10
0
0
1
2
VF [V]
Fig. 1 Forward current IF versus VF
2.0
1.5
Kf 1.0 0.5
IRM Qr
0
100
1000
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt
0 0 200 400 600 800 1000 -diF /dt [A/μs]
Fig. 3 Typ. peak reverse current IRM versus -diF/dt
120
20
1.6
TVJ = 100°C VR = 300 V
TVJ = 100°C V IF = 15 A
110
15
1.2
trr 100 [ns] 90
8.