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DSEC30-06A Dataheets PDF



Part Number DSEC30-06A
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFRED Epitaxial Diode
Datasheet DSEC30-06A DatasheetDSEC30-06A Datasheet (PDF)

HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC30-06A 1 2 3 DSEC30-06A VRRM I FAV t rr = 600 V = 2x 15 A = 35 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power di.

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HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC30-06A 1 2 3 DSEC30-06A VRRM I FAV t rr = 600 V = 2x 15 A = 35 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) Package: TO-247 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b DSEC30-06A Fast Diode Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current forward voltage drop average forward current VR = 600 V VR = 600 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A TC = 140°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ I RM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance max. reverse recovery current t = 10 ms; (50 Hz), sine; VR = 0 V VR = 400 V f = 1 MHz t rr reverse recovery time IF = 15 A; VR = 300 V -diF/dt = 200 A/µs EAS non-repetitive avalanche energy IAS = 1 A L = 180 µH IAR repetitive avalanche current VA = 1.5·VR typ.: f = 10 kHz TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150°C TVJ = 175°C Ratings min. typ. max. Unit 600 V 600 V 100 µA 0.5 mA 2.03 V 2.24 V 1.34 V 1.57 V 15 A TVJ = 175°C TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100 °C TVJ = 25 °C TVJ = 100 °C TVJ = 25°C 0.25 12 5 7 35 95 0.99 V 14.3 mΩ 1.6 K/W K/W 95 W 110 A pF A A ns ns 0.1 mJ 0.1 A IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b Package TO-247 Symbol I RMS TVJ T op Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Conditions per terminal 1) Logo Part No. Assembly Line Assembly Code Date Code IXYS XXXXXXXXX Zyyww abcd DSEC30-06A Ratings min. typ. max. Unit 50 A -55 175 °C -55 150 °C -55 150 °C 6 g 0.8 1.2 Nm 20 120 N Ordering Standard Part Number DSEC30-06A Marking on Product DSEC30-06A Delivery Mode Tube Quantity Code No. 30 473502 Similar Part DSEC30-06B DSEC29-06AC Package TO-247AD (3) ISOPLUS220AB (3) Voltage class 600 600 Equivalent Circuits for Simulation I V0 R0 V 0 max R0 max threshold voltage slope resistance * Fast Diode 0.99 11.7 * on die level T VJ = 175 °C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b DSEC30-06A Outlines TO-247 E Q A A2 ØP S D 2x E2 123 L1 L 2x b2 b4 2x e 3x b C A1 Ø P1 D2 D1 4 E1 Sym. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 - 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 - - 0.29 Millimeter min. max. 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 - 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 - 0.51 1.35 13.45 - - 7.39 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b DSEC30-06A Fast Diode 40 30 IF 20 [A] 10 TVJ = 150°C 100°C 25°C 2000 TVJ = 100°C VR = 300 V 1500 Qr 1000 [μC] 500 IF = 30A 15 A 7.5 A 40 TVJ = 100°C VR = 300 V 30 IRM 20 [A] IF = 30A 15 A 7.5 A 10 0 0 1 2 VF [V] Fig. 1 Forward current IF versus VF 2.0 1.5 Kf 1.0 0.5 IRM Qr 0 100 1000 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 0 0 200 400 600 800 1000 -diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus -diF/dt 120 20 1.6 TVJ = 100°C VR = 300 V TVJ = 100°C V IF = 15 A 110 15 1.2 trr 100 [ns] 90 8.


AZ55 DSEC30-06A F100304


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