IRG4ZC70UD

www.DataSheet4U.com PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable UltraFast CoPack IGBT C q q q q q UltraFast IGBT optimized for high switching frequencies n-channel IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate charge G Low profile low inductance SMD-10 package E(k) Separated control & Power-connections for easy paralleling Inherently coplanar pins and tab Easy solder inspection and cleaning VCES = 600V VCE(ON)typ = 1.5V @VGE = 15V, IC = 50A E Benefits q q q q Highest power density and efficiency available HEXFRED diodes optimized for performance with IGBTs; Minimized recovery characteristics IGBTs optimized for specific application conditions; high input impedance requires low gate drive power Low noise and interference Parameter Max. 600 100 50 400 400 50 400 ± 20 350 140 -55 to + 150 SMD-10 Absolute Maximum Ratings Units V A VCES IC @ TC = 25°C IC @ TC = 100°C I CM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Œ Clamped Inductive Load Current  Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range V W °C Thermal Resistance Parameter RθJ...