www.DataSheet4U.com
PD -9.1668A
IRG4ZC70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Featur...
www.DataSheet4U.com
PD -9.1668A
IRG4ZC70UD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
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Surface Mountable UltraFast CoPack IGBT
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UltraFast IGBT optimized for high switching frequencies n-channel IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate charge G Low profile low inductance SMD-10 package E(k) Separated control & Power-connections for easy paralleling Inherently coplanar pins and tab Easy solder inspection and cleaning
VCES = 600V VCE(ON)typ = 1.5V
@VGE = 15V, IC = 50A
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Benefits
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Highest power density and efficiency available HEXFRED diodes optimized for performance with IGBTs; Minimized recovery characteristics IGBTs optimized for specific application conditions; high input impedance requires low gate drive power Low noise and interference Parameter Max.
600 100 50 400 400 50 400 ± 20 350 140 -55 to + 150
SMD-10
Absolute Maximum Ratings
Units
V A VCES IC @ TC = 25°C IC @ TC = 100°C I CM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
V W °C
Thermal Resistance
Parameter
RθJ...