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PD - 9.1077
IRGPC40K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(sat) ≤ 3.2V
@VGE = 15V, IC = 25A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
TO -2 4 7 AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C I CM ILM tsc VGE EARV PD @ T C = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 42 25 84 84 10 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m)
Units
V A
µs V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
---------------------
Typ.
-----0.24 -----6 (0.21)
Max.
0.77 -----40 ------
Units
°C/W g (oz)
IRGPC40K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 ---- ---V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 20 ---- ---V VGE = 0V, IC = 1.0A ∆ V (BR)CES/ ∆T J Temperature Coeff. of Breakdown Voltage---- 0.46 ---- V/°C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage ---- 2.1 3.2 IC = 25A V GE = 15V VCE(on) ---- 2.8 ---V IC = 42A See Fig. 2, 5 ---- 2.5 ---IC = 25A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA ∆V GE(th)/ ∆T J Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA Forward Transconductance
7.0 14 ---S VCE = 100V, IC = 25A gfe ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V V(BR)CES V(BR)ECS
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Q gc t d(on) tr t d(off) tf Eon Eoff Ets tsc t d(on) tr t d(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ------------------------------10 Typ. 61 13 22 35 27 160 130 0.52 1.2 1.7 ---Max. Units Conditions 92 IC = 25A 19 nC VCC = 400V See Fig. 8 33 VGE = 15V ---TJ = 25°C ---ns IC = 25A, VCC = 480V 240 VGE = 15V, RG = 10 Ω 200 Energy losses include "tail" ------mJ See Fig. 9, 10, 11, 14 2.6 ---µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω, VCPK < 500V ---TJ = 150°C, ---ns IC = 25A, VCC = 480V ---VGE = 15V, RG = 10 Ω ---Energy losses include "tail" ---mJ See Fig. 10, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz
---34 ---28 ---- 300 ---- 310 ---- 3.6 ---- 7.5 ---- 1500 ---- 190 ---17
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature. ( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 5.0µs,
single shot.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
IRGPC40K
50
For both:
Triangular wave:
40
Load Current (A)
Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 35W
Clamp voltage: 80% of rated
30 Square wave: 60% of rated voltage 20
10 Ideal diodes
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK )
100
1000
I C , Collector-to-Emitter Current (A)
10
IC , Collector-to-Emitter Current (A)
100
T J = 150°C TJ = 25°C
1
TJ = 150°C
10
TJ = 25°C
0.1 0.1 1
VGE = 15V 20µs PULSE WIDTH A
10
1 5 10
VCC = 100V 5µs PULSE WIDTH A
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Em.