NTMD6P02R2

www.DataSheet4U.com NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P–Channel SO–8, Dual Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO–8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified SO–8 Mounting Information Provided http://onsemi.com 6 AMPERES 20 VOLTS RDS(on) = 33 mW P–Channel D Unit V V °C/W W A A W A A °C/W W A A W A A °C/W W A A W A A 8 1 L Y WW = Location Code = Year = Work Week S G Applications Power Management in Portable and Battery–Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Thermal Resistance – Junction–to–Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4.) Thermal Resistance – Junction–to–Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4.) Thermal Resistance – Junction–to–Ambient (Note 3.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Max...