SDP55N02

www.DataSheet4U.com S DP /B 55N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S Max ID 32A R DS (on) ( m W ) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 19 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 20 12 23 57 55 75 -65 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 1 2 62.5 C /W C /W S DP /B 55N02 E LE CTR ICAL CHAR ACTE R IS TICS (T C = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS b S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 8V, V DS =0V V DS = V GS , ID = 250uA V GS = 4.5V, ID = 21A V DS = 10V, V GS = 10V V DS = 10V, ID = 26A Min Typ Max Unit 20 10 V uA 100 nA 0.9 1 14 40 53 1100 600 180 1.5 19 V m ohm C 4 ON CHAR ACTE ...