SI3812DV

www.DataSheet4U.com Si3812DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V ID (A) "2.4 "1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 0.5 D K TSOP-6 Top View A 1 6 K G 3 mm S 2 5 N/C G 3 4 D 2.85 mm S N-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71069 S-03510—Rev. D, 16-Apr-01 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec 20 20 "12 "2.4 "1.7 "8 1.05 0.5 8 1.15 0.59 1.0 0.52 Steady State Unit V "12 "2.0 "1.4 A 0.75 0.5 8 0.83 0.53 0.76 0.48 –55 to 150 _C W 1 Si3812DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta t v 5 sec Device MOSFET Schottky MOSFET Symbol Typical 93 103 Maximum 110 125 150 165 90 95 Unit RthJA 130 140 75 Junction-to-Ambienta Steady State Schottky MOSFET RthJF ...