SUV90N06-05

SUV90N06-05 Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V TO-262 ID (A) 90a FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized APPLICATIONS Isolated DC/DC Converters - Primary-Side Switch D 1 23 G G DS Top View SUV90N06-05 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ± 20 Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C ID 90a 90a A IDM 240 Avalanche Current IAS 75 Single Pulse Avalanche Energyb L = 0.1 mH EAS 280 mJ Maximum Power Dissipationb TC = 25 °C 350c TA = 25 °Cd PD 4.3 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). Document Number: 72112 S-71599-Rev. C, 30-Jul-07 Symbol RthJA RthJC Limit 40 0.5 Unit °C/W www.vishay.com 1 SUV90N06-05 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0...