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SUV90N06-05 Dataheets PDF



Part Number SUV90N06-05
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SUV90N06-05 DatasheetSUV90N06-05 Datasheet (PDF)

SUV90N06-05 Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V TO-262 ID (A) 90a FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized APPLICATIONS • Isolated DC/DC Converters - Primary-Side Switch D 1 23 G G DS Top View SUV90N06-05 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-S.

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SUV90N06-05 Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V TO-262 ID (A) 90a FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized APPLICATIONS • Isolated DC/DC Converters - Primary-Side Switch D 1 23 G G DS Top View SUV90N06-05 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ± 20 Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C ID 90a 90a A IDM 240 Avalanche Current IAS 75 Single Pulse Avalanche Energyb L = 0.1 mH EAS 280 mJ Maximum Power Dissipationb TC = 25 °C 350c TA = 25 °Cd PD 4.3 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). Document Number: 72112 S-71599-Rev. C, 30-Jul-07 Symbol RthJA RthJC Limit 40 0.5 Unit °C/W www.vishay.com 1 SUV90N06-05 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125 °C VDS = 48 V, VGS = 0 V, TJ = 175 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125 °C VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea gfs VDS = 15 V, ID = 30 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 90 A Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec tr td(off) VDD = 30 V, RL = 0.4 Ω ID ≅ 90 A, VGEN = 10 V, RG = 2.5 Ω Fall Timec tf Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b Continuous Current IS Pulsed Current ISM Forward Voltagea VSD IF = 90 A, VGS = 0 V Reverse Recovery Time trr Peak Reverse Recovery Current IRM(REC) IF = 90 A, di/dt = 100 A/µs Reverse Recovery Charge Qrr Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Min Typ Max Unit 60 V 1 3 ± 100 nA 1 50 µA 250 120 A 0.0044 0.0052 0.0059 0.0072 Ω 0.0085 0.010 30 S 7560 1050 pF 570 155 220 28 nC 44 15 25 90 130 ns 95 140 105 150 75 A 240 1.1 1.4 V 50 85 ns 2.7 5 A 0.067 0.21 µC Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72112 S-71599-Rev. C, 30-Jul-07 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 200 VGS = 10 thru 5 V 200 160 4V 150 120 SUV90N06-05 Vishay Siliconix I D - Drain Current (A) I D - Drain Current (A) 100 50 0 0 250 200 150 100 50 3V 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) Output Characteristics TC = - 55 °C 25 °C 125 °C 80 40 0 0 0.008 TC = 125 °C 25 °C - 55 °C 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 0.006 0.004 VGS = 4.5 V VGS = 10 V 0.002 rDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 0 0 12000 10000 20 40 60 80 100 ID - Drain Current (A) Transconductance Ciss C - Capacitance (pF) 8000 6000 4000 2000 Coss 0 Crss 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72112 S-71599-Rev. C, 30-Jul-07 V GS - Gate-to-Source Voltage (V) 0.000 0 20 20 40 60 80 100 120 ID - Drain Current (A) On-Resistance vs. Drain Current 16 VGS = 30 V ID = 85 A 12 8 4 0 0 60 120 180 240 300 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUV90N06-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted rDS(on) - On-Resistance (Normalized) 2.5 VGS = 10 V ID = 30 A 2.0 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-.


STYNxxxS SUV90N06-05 SY88933AL


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