Document
SUV90N06-05
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
60
0.0052 at VGS = 10 V
0.0072 at VGS = 4.5 V
TO-262
ID (A) 90a
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized
APPLICATIONS • Isolated DC/DC Converters
- Primary-Side Switch
D
1 23 G
G DS Top View SUV90N06-05
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
ID
90a 90a
A
IDM
240
Avalanche Current
IAS
75
Single Pulse Avalanche Energyb
L = 0.1 mH
EAS
280
mJ
Maximum Power Dissipationb
TC = 25 °C
350c
TA = 25 °Cd
PD
4.3
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72112 S-71599-Rev. C, 30-Jul-07
Symbol RthJA RthJC
Limit 40 0.5
Unit °C/W
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SUV90N06-05
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 µA
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 48 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 48 V, VGS = 0 V, TJ = 125 °C
VDS = 48 V, VGS = 0 V, TJ = 175 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125 °C
VGS = 10 V, ID = 30 A, TJ = 175 °C
Forward Transconductancea
gfs
VDS = 15 V, ID = 30 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = 30 V, VGS = 10 V, ID = 90 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec Turn-Off Delay Timec
tr td(off)
VDD = 30 V, RL = 0.4 Ω ID ≅ 90 A, VGEN = 10 V, RG = 2.5 Ω
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD
IF = 90 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 90 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Min
Typ
Max
Unit
60
V
1
3
± 100
nA
1
50
µA
250
120
A
0.0044 0.0052
0.0059 0.0072 Ω
0.0085
0.010
30
S
7560
1050
pF
570
155
220
28
nC
44
15
25
90
130
ns
95
140
105
150
75 A
240
1.1
1.4
V
50
85
ns
2.7
5
A
0.067
0.21
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 72112 S-71599-Rev. C, 30-Jul-07
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
200
VGS = 10 thru 5 V
200
160
4V
150
120
SUV90N06-05
Vishay Siliconix
I D - Drain Current (A)
I D - Drain Current (A)
100 50 0 0
250 200 150 100
50
3V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V) Output Characteristics
TC = - 55 °C 25 °C
125 °C
80 40
0 0
0.008
TC = 125 °C 25 °C
- 55 °C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
0.006 0.004
VGS = 4.5 V
VGS = 10 V
0.002
rDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
0 0
12000 10000
20
40
60
80
100
ID - Drain Current (A) Transconductance
Ciss
C - Capacitance (pF)
8000
6000
4000 2000
Coss
0
Crss
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V) Capacitance
Document Number: 72112 S-71599-Rev. C, 30-Jul-07
V GS - Gate-to-Source Voltage (V)
0.000 0
20
20
40
60
80
100 120
ID - Drain Current (A) On-Resistance vs. Drain Current
16
VGS = 30 V ID = 85 A
12
8
4
0
0
60
120
180
240
300
Qg - Total Gate Charge (nC) Gate Charge
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SUV90N06-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
rDS(on) - On-Resistance (Normalized)
2.5
VGS = 10 V ID = 30 A 2.0
1.5
1.0
0.5
0.0 - 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature
I S - Source Current (A)
100
TJ = 150 °C 10
TJ = 25 °C
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-.