H7N1004LM

www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) Rev.6.00 Aug.27.2003 Features Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.2003, page 1 of 11 H7N1004LD, H7N1004LS, H7N1004LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 30 100 30 15 22.5 50 150 –55 to +150 Unit V V A A A A mJ W °C °C Pch* Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.6.00, Aug.27.2003, page 2 of 11 H7N1004LD, H7N1004LS, H7N1004LM Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 V(BR)GSS ±20 IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr — — 1.5 — — 22 — — — — — — — — — — — — Typ — — — — — 25 30 37 2800 240 140 50 9 11 23 120 70 9.5 0.9 47 Max — — ±10 10 2.5 35 45 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 100 A/µs Test condit...