IXKC20N60C

IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S VDSS = 600 V ID25 = 15 A RDS(on) max = 190 mΩ ISOPLUS220TM G D S E72873 q isolated tab MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse; ID = 10 A; TC = 25°C repetitive; ID = 20 A; TC = 25°C Maximum Ratings 600 V ± 20 V 15 A 10.5 A 690 mJ 1 mJ Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = 16 A VDS = VGS; ID = 1 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 25 V f = 1 MHz TVJ = 25°C TVJ = 150°C VGS = 0 to 10 V; VDS = 350 V; ID = 20 A VGS = 13 V; VDS = 380 V ID = 21 A; RG = 3.3 Ω; TVJ = 125°C 160 2.1 2400 780 87 11 33 10 5 67 4.5 190 mΩ 3.9 V 25 µA 250 µA 100 nA pF pF 114 nC nC nC ns ns ns ns 1 K/W Features Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Enhanced total power density Applications Switched mode power supplies (SMPS) Unint...