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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
KTC4075V
EPITAXIA...
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
KTC4075V
EPITAXIAL PLANAR
NPN TRANSISTOR
E
FEATURES
ᴌExcellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTA2014V. ᴌVery Small Package.
P
B
A
G
1
H
3
K
P
C
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 5 150 30 100 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ
1. EMITTER 2. BASE 3. COLLECTOR
VSM
Marking
Type Name h FE Rank
L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1kHz, Rg=10kή BL(8):350~700 MIN. 70 80 TYP. 0.1 2.0 1.0 MAX. 0.1 0.1 700 0.25 3.5 10 V MHz pF dB UNIT Ọ A Ọ A
Note : hFE Classification O(2):70ᴕ140, Y(4):120ᴕ240, GR(6):200ᴕ400,
2001. 12. 5
Revision No : 1
J
D
ᴌHigh hFE : hFE=70~700.
2
DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 D 0.3 + _ 0.05 E 1.2 + _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K ...