M36L0R7060U1

www.DataSheet4U.com M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 or 64Mbit Mux I/O, Burst Pseudo SRAM Supply voltage – VDDF = VDDP = VDDQF = 1.7 to 1.95V – VPPF = 9V for fast program Electronic signature – Manufacturer Code: 20h – Device Codes (Top Flash Configuration): M36L0R7060U1: 882Eh, M36L0R7050U1: 882Eh – Device Codes (Bottom Flash Configuration) M36L0R7060L1: 882Fh M36L0R7050L1: 882Fh ECOPACK® package ■ FBGA TFBGA88 (ZAM) 8 x 10mm ■ ■ ■ Dual operations – program/erase in one Bank while read in others – No delay between Read and Write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS Common Flash Interface (CFI) ■ ■ Flash memory ■ ■ Multiplexed address/data Synchronous / asynchronous read – Synchronous Burst Read mode: 66MHz – Random Access: 85ns Synchronous burst read suspend programming time – 10µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) Security – 64 bit unique device number – 2112 bit user programmable OTP...