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MA4AGSW8-2 Dataheets PDF



Part Number MA4AGSW8-2
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description AlGaAs SP8T PIN Diode Switch
Datasheet MA4AGSW8-2 DatasheetMA4AGSW8-2 Datasheet (PDF)

www.DataSheet4U.com AlGaAs SP8T PIN Diode Switch V 1.00 MA4AGSW8-2 Features n n n n n n MA4AGSW8-2 Layout Specified Performance : 50 MHz to 40 GHz Operational performance: 50 MHz to 50 GHz 2.0 dB Typical Insertion Loss at 40 GHz 30 dB Typical Isolation at 40 GHz thru 3 Diodes 22 dB Typical Isolation at 40 GHz thru 2 Diodes Low Current comsumption : 10 m A for low loss state 0 Volts for Isolation state n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitri.

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www.DataSheet4U.com AlGaAs SP8T PIN Diode Switch V 1.00 MA4AGSW8-2 Features n n n n n n MA4AGSW8-2 Layout Specified Performance : 50 MHz to 40 GHz Operational performance: 50 MHz to 50 GHz 2.0 dB Typical Insertion Loss at 40 GHz 30 dB Typical Isolation at 40 GHz thru 3 Diodes 22 dB Typical Isolation at 40 GHz thru 2 Diodes Low Current comsumption : 10 m A for low loss state 0 Volts for Isolation state n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n BCB Impact Protection Description M/A-COM’s MA4AGSW8-2 is an Aluminum-Gallium-Arsenide (AlGaAs) anode enhanced, SP8T PIN diode Series Switch. Operation is accomplished with 10 mA applied to the low loss port and 0 V for the isolated ports. M/A-COM’s AlGaAs process utilizes a patent pending hetero-junction technology which produces lower insertion loss than conventional GaAs devices. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit low series resistance, ( 3 Ω ) , low capacitance ( 20 fF ) , and fast switching speed ( 20 nS ). The MA4AGSW8-2 device is fully passivated with silicon nitride, and has an additional layer of a polyamide for impact protection. This protective coating prevents damage to the junction and the anode air bridges during assembly and test. RF to DC bias networks are required. This allows the MA4AGSW8-2 device to be optimized for a particular operating band. Absolute Maximum Ratings1 @ TA = +25 °C (Unless otherwise specified) Parameter Operating Temperature Storage Temperature Incident C.W. RF Power Reverse Voltage Bias Current Maximum Rating -55 °C to +125 °C -65 °C to +150 °C + 23 dBm C. W. 25 V +/- 30 mA Applications The low capacitance of the PIN diodes makes this device ideal for use in microwave multi-throw switch designs. The low series resistance of the diodes reduces the insertion loss of the devices at microwave/millimeter-wave frequencies. These AlGaAs PIN switches are used as switching arrays on radar systems, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. 1. Exceeding any of these values may result in permanent damage AlGaAs SP8T PIN Diode Switch MA4AGSW8-2 V 1.00 Electrical Specifications @ TA = 25 °C, -15 mA Bias Current, and 0 Volts (On-Wafer Measurements) RF Specifications Parameter Insertion Loss Frequency 0.05 - 18 GHz 18 - 26 GHz 26 - 40 GHz 0.05 - 18 GHz 18 - 26 GHz 26 - 40 GHz 0.05 - 18 GHz 18 - 26 GHz 26 - 40 GHz 10 GHz Minimum 40 35 30 10 13 17 - Typical 1.5 1.8 2.0 45 42 35 15 15 20 20 Maximum 2.0 2.1 2.3 - Units dB dB dB dB dB dB dB dB dB ns Isolation1 Input/Output Return Loss Switching Speed2 NOTES: 1. Isolation is measured through (3) Diodes from Common Port ( Input ) to Selected Output Port with (1) Opposite Port in Low Loss. Isolation for (2) Diodes from Common Port ( Input ) to Selected Output with (1) Adjacent Port in Low Loss = 22 dB Typical. 2. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5 V TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times. D.C. Bias to RF Truth Table Output Ports Input Port J1 J1 J1 J1 J1 J1 J1 J1 NOTES: 1. Low Loss = -15mA applied at the specified Output Port. (A dc ground return at port J1 must be provided) 2. Isolation = 0 Volts applied at the specified Output Ports. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. @J2 Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation @J3 Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Isolation @J4 Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation @J5 Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation @J6 Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation @J7 Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation @J8 Isolation Isolation Isolation Isolation Isolation Isolation Low Loss Isolation @J9 Isolation Isolation Isolation Isolation Isolation Isolation Isolation Low Loss n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AlGaAs SP8T PIN Diode Switch Frequency Performance MA4AGSW8-2 V 1.00 (dB) 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 10 Typical Insertion Loss 20 30 40 50 freq, GHz Typical Return Loss (dB) 0 -5 -10 -15 -20 -25 -30 0 10 20 30 40 50 freq, GHz 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.c.


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