MA4E2037

www.DataSheet4U.com GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6) Description M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. 0.18 0 ± .0 20 (7.1 ± .8 ) 0.26 5 ± .0 40 (10.4 ± 1.6) 0.63 0 ± .0 10 (24.8 ± .6 ) 0.06 0 (2.4 ) 0.08 5 (3.4 ) 0.00 9 (0.4 ) 0.01 3 (0.5 ) MA4E2039 0 .1 3 5 ± .0 1 0 (5 .3 ± .4 ) 0 .2 1 0 ± .0 4 0 (8 .3 ± 1 .6 ) Applications The high cut-off frequency of these diodes allows use through low millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, automotive radar ...