MA4SW410B-1

www.DataSheet4U.com SP4T PIN Diode with Integrated Bias Network V 2.00 MA4SW410B-1 Features n n n n Outline Drawing Broad Bandwith Specified from 2 to 18 GHz Integrated D.C. Bias Network Exceptional Isolation to Loss Ratio Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies. Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 nS Switching Speeds are Achieved. Nominal Die Dimensions Inches Millimeters Dim A B Min .085 .106 .048 .007 .033 .057 0.77 0.46 .024 Max .058 .110 .052 .011 .034 .061 .081 .050 .028 Min 2.17 2.69 1.22 0.17 0.85 1.46 1.96 1.18 0.61 Max 2.27 2.79 1.32 0.27 0.86 1.56 2.06 1.28 0.71 Absolute Maximum Ratings 1 C D E F G H I RF Bond Pads DC Bond Pads Thickness @ TA = +25 °C (unless otherwise specified) Parameter Operating Temperature Storage...