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MA4VAT904-1061T Dataheets PDF



Part Number MA4VAT904-1061T
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description High IIP3 PIN Diode Variable Attenuator
Datasheet MA4VAT904-1061T DatasheetMA4VAT904-1061T Datasheet (PDF)

www.DataSheet4U.com High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc ) SOIC-8 Surface Mount Package RoHs Compliant MA4VAT904-1061T V2 Extra Features • Covers the following Bands: • GSM • AMPS • Usable Bandwidth: 0.60 GHz to 1.20 GHz • 1.5 dB Insertion Loss, Typical • 1.8:1 VSWR, Typical • 18.5 dB Attenuation, Typical SOIC-8 PIN Configu.

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www.DataSheet4U.com High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc ) SOIC-8 Surface Mount Package RoHs Compliant MA4VAT904-1061T V2 Extra Features • Covers the following Bands: • GSM • AMPS • Usable Bandwidth: 0.60 GHz to 1.20 GHz • 1.5 dB Insertion Loss, Typical • 1.8:1 VSWR, Typical • 18.5 dB Attenuation, Typical SOIC-8 PIN Configuration (Topview) PIN Function DC1 GND GND RFin/out RFout/in GND GND DC2 Symetrical as RF Input/Ouput Symetrical as RF Input/Ouput Comments Description and Applications M/A-COM’s MA4VAT904-1061T is a HMIC PIN Diode Variable Attenuator which utilizes an integrated 90 degree 3dB hybrid with a pair of Silicon PIN Diodes to perform the required attenuation function as D.C. Voltage (Current) is applied. This device operates from 0 to 1.9 Volts at 1.89 mA typical control current for maximum attenuation. The user can add external biasing resistors to the bias ports for higher voltage requirements as required. M/A-COM’s MA4VAT904-1061T PIN Diode Variable Attenuator is designed for AGC Circuit Applications requiring: • Lower Insertion Loss • Lower distortion through attenuation • Larger dynamic range for wide spread spectrum applications 1 2 3 4 5 6 7 8 Absolute Maximum Ratings @ +25 °C Parameter Operating Temperature Storage Temperature Junction Temperature RF C.W. Incident Power Reversed Current @ -30 V Control Current Maximum Ratings -40 °C to +85 °C -65 °C to +150 °C +175 °C +33 dBm C.W. 50nA 50 mA per Diode Notes: 1. All the above values are at +25 °C, unless otherwise noted. 2. Exceeding these limits may cause permanent damage. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Electrical Specifications @ +25 °C Parameter No DC Bias RF Parameter Insertion Loss Input Return Loss Output Return Loss P1dB Input IP3 Control Voltage DC Bias RF Parameter Maximum Attenuation Input Return Loss @ Max Attenuation Output Return Loss @ Max Attenuation Input IP3 Control Voltage @ Max Attenuation 0.80 GHz—1.00 GHz dB dB dB dBm V 18.5 15 15 36 24 21 21 39 0.80 GHz—1.00 GHz dB dB dB dBm dBm V 11 11 30 45 Frequency Band Unit Min MA4VAT904-1061T V2 Typ Max 1.0 12 12 49 0 V @ OuA 1.2 - - 1.9 V @ 1.89 mA Typical RF Performance Over Industry Designated RF Frequency Bands Band Freq (MHz) AMPS RX TX 824-849 869-894 I. Loss (dB) 0.9 0.9 Att. (dB) 22 22 R. Loss (dB) 12 12 IIP3 (dBm) 45 45 Phase -Relative(Degree) -15° GSM RX TX 880-915 925-960 1.2 1.2 20 20 11 11 45 45 -20° Notes: 1. All are typical values only. 2. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation. (Please refer to the plots below) 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Plots of Typical RF Characteristics @ +25 °C Typical Insertion Loss & Attenuation Plot MA4VAT904-1061 Typical Attenuation 0 MA4VAT904-1061T V2 Typical Attenuation vs Voltage Plot MA4VAT904-1061 Attenuation vs Control Voltage 0 -5 -5 Attenuation dB) -15 -20 -25 -30 0.600 0.700 0.800 0.900 1.000 1.100 1.200 Attenuation (dB) -10 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 Frequency (GHz) 0V/0mA 1.53V/1.28mA 0.77V/0.28mA 1.77V/1.62mA 0.93V/0.48mA 1.89V/1.80mA 1.27V/0.93mA Bias Voltage (V) 800MHz 900MHz 1000MHz Typical Return Loss @ All Attenuation Levels Plot MA4VAT904-1061 Typical Input Return Loss 0 -5 Typical IIP3 vs Attenuation Plot MA4VAT904-1061 Typical IP3 vs Bias Voltage @900MHz (1MHz Offset, +0dBm Pin) 70 60 Return Loss dB) -10 50 IP3 (dBm) 0.700 0.800 0.900 1.000 1.100 1.200 -15 -20 -25 -30 0.600 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) 0V/0mA 0.77V/0.28mA 0.93V/0.48mA 1.27V/0.93m.


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