MAAPGM0019

www.DataSheet4U.com 9.8-13.0 GHz 1.6 W Power Amplifier Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG™ Process RO-P-DS-3073 B Preliminary Information MAAPGM0019 Primary Applications ♦ 11 GHz Point-to-Point Radio ♦ 13 GHz Point-to-Point Radio ♦ SatCom APGM0019 YWWLLLL Description The MAAPGM0019 is a packaged, 3-stage, 1.6 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection VDD1/2 VDD3 RF OUT VDD3 VDD1/2 Maximum Operating Conditions 1 Parameter Input Power Drain Supply Vo...