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MAAPGM0028 Dataheets PDF



Part Number MAAPGM0028
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description Power Amplifier
Datasheet MAAPGM0028 DatasheetMAAPGM0028 Datasheet (PDF)

www.DataSheet4U.com 2.0-6.5 GHz 0.5W Power Amplifier Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG™ Process RO-P-DS-3096 Preliminary Information MAAPGM0028 Primary Applications ♦ MMDS, WLL ♦ 5.1- 5.9 GHz HyperLAN ♦ UNII APGM0028 YWWLLLL Description The MAAPGM0028 is a packaged, 2-stage, 0.5W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both .

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www.DataSheet4U.com 2.0-6.5 GHz 0.5W Power Amplifier Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG™ Process RO-P-DS-3096 Preliminary Information MAAPGM0028 Primary Applications ♦ MMDS, WLL ♦ 5.1- 5.9 GHz HyperLAN ♦ UNII APGM0028 YWWLLLL Description The MAAPGM0028 is a packaged, 2-stage, 0.5W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection No Connection RF IN No Connection VGG No Connection No Connection RF OUT No Connection VDD Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% IDSS) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Processing Temperature 1 1. Operation outside of these ranges may reduce product reliability. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 23.0 +12.0 -3.0 470 3.2 180 -55 to +150 230 Units dBm V V mA W °C °C °C • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-6.5 GHz 0.5W Power Amplifier Recommended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance Package Base Temperature Symbol VDD VGG PIN TJ ΘJC TB 28.4 Note 2 Min 4.0 -2.4 Typ 8.0 -2.0 18.0 Max 10.0 -1.5 21 150 RO-P-DS-3096 Preliminary Information MAAPGM0028 Unit V V dBm °C °C/W °C 2. Maximum Package Base Temperature = 150°C — ΘJC* VDD * IDQ Electrical Characteristics: TB = 40°C, Z0 = 50 Ω, VDD = 8V, IDQ ≈ 300 mA3, Pin = 18 dBm, RG ≈ 250 Ω Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Noise Figure 2 Harmonic 3 Harmonic 3rd Order Intermodulation Distortion, Single Carrier Level = 17 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 17 dBm rd nd Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD NF 2f 3f IM3 IM5 Typical 2.0-6.5 29 25 26 14 2:1 2.2:1 <2 < 450 8 -10 -20 -20 -46 Units GHz dBm % dBm dB mA mA dB dBc dBc dBm dBm 3. Adjust VGG between –2.4 to –1.5V to achieve indicated IDQ. Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG ≈ -1.8V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (See Note 3 above). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-6.5 GHz 0.5W Power Amplifier RO-P-DS-3096 Preliminary Information MAAPGM0028 50 POUT PAE 40 50 50 50 POUT PAE 40 40 40 POUT (dBm) POUT (dBm) PAE(%) 20 20 20 20 10 10 10 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 0 4.0 5.0 6.0 7.0 8.0 9.0 0 10.0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 18 dBm Drain Voltage (volts) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 4 GHz 50 VDD = 4 VDD = 8 VDD = 6 VDD = 10 24 20 G ain Input VSW R O utput VSW R 7 6 40 16 5 P1dB (dBm) Gain (dB).


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