MAAPGM0060

www.DataSheet4U.com RO-P-DS-3090 — Preliminary Information 4.8-6.7 GHz 5W Power Amplifier MAAPGM0060 MAAPGM0060 Features ♦ 5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (6-10V) Operation ♦ GaAS MSAG™ MESFET Process Primary Applications ♦ ♦ ♦ APGM0060 YWWLLLL Point-to-Point Radio SatCom UNII and ISM Band Description The MAAPGM0060 is a 2-stage 5 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate MESFET Process. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection VDD1 VDD2 RF OUT VDD2 VDD1 Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN ...