www.DataSheet4U.com
Amplifier, Power, 2.0 W 6.5—9.5 GHz
Features
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903261 — Preliminary Information
MAAPGM0064
...
www.DataSheet4U.com
Amplifier, Power, 2.0 W 6.5—9.5 GHz
Features
♦ ♦ ♦ ♦
903261 — Preliminary Information
MAAPGM0064
2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ Process High Performance Ceramic Bolt Down Package
Primary Applications
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APGM0064 YWWXXX
Multiple Band Point-to-Point Radio SatCom ISM Band
Description
The MAAPGM0064 is a 2-stage 2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction SelfAligned Gate Process. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted
transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Pin Number 1 2 3 4 5 6 7 8 9 10
RF Designator No Connection VGG RF IN VGG No Connection No Connection VDD RF OUT VDD No Connection
Maximum Operating Conditions 1
Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% Idss) Quiescent DC Power Dissipated (No RF) Junction...