NE3511S02

www.DataSheet4U.com HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz Micro-X plastic (S02) package APPLICATIONS X to Ku-band DBS LNB Other X to Ku-band communication systems ORDERING INFORMATION Part Number NE3511S02-T1C NE3511S02-T1D Order Number NE3511S02-T1C-A NE3511S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking B Supplying Form 8 mm wide embossed taping Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3511S02-A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Note Ratings 4 −3 IDSS 100 165 +125 −65 to +125 Unit V V mA µA mW °C °C Tch Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10642EJ01V0DS (1st edition) Date Published October 2006 NS CP(N) 2006 NE3511S02 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 5 − TYP. 2 10 − MAX. 3 20 0 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = +2...