PBSS5420D

PBSS5420D 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4420D. 1.2 Features I Very low collector-emitter saturation resistance I Ultra low collector-emitter saturation voltage I 4 A continuous collector current I Up to 15 A peak current I High efficiency leading to less heat generation 1.3 Applications I Power management functions I Charging circuits I DC-to-DC conversion I MOSFET gate driving I Power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VCEO IC ICM RCEsat collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −4 A; IB = −400 mA [1] - - [2] - - −20 - −4 - −15 50 70 [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Unit V A A mΩ NXP Semiconductors PBSS5420D 20 V, 4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector Simplified outline Graphic symbol 654 123 1, 2, 5, 6 3 4 sym030 3. Ordering information Table 3. Orde...