PBSS8110X

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X. 1.2 Features „ SOT89 package „ Low collector-emitter saturation voltage VCEsat „ High collector current capability: IC and ICM „ High efficiency leading to less heat generation 1.3 Applications „ Major application segments: ‹ Automotive 42 V power ‹ Telecom infrastructure ‹ Industrial „ Peripheral driver: ‹ Driver in low supply voltage applications (e.g. lamps and LEDs) ‹ Inductive load driver (e.g. relays, buzzers and motors) „ DC-to-DC converter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO IC ICM collector-emitter voltage collector current (DC) peak collector current RCEsat collector-emitter saturation resistance [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Conditions open base single pulse; tp ≤ 1 ms IC = 1 A; IB = 100 mA Min Typ Max - - 100 --1 --3 [1] - 165 200 Unit V A A mΩ NXP Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description emitter collector base Simplified outline Symbol 321 2 3 1 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description PBSS8110X SC-62 plastic surface mounted package; collector pad for good heat tr...