HFA50HF20

www.DataSheet4U.com PD 2.506 PRELIMINARY HFA50HF20 Ultrafast, Soft Recovery Diode CATHODE HEXFRED Features TM VR = 200V V F = 0.96V Qrr * = 640nC di(rec)M/dt * = 980A/µs * 125°C Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount ANODE ANODE Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM SMD -1 Absolute Maximum Ratings (per Leg) Parameter VR I F @ TC = 100°C I FSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.C. Reverse Voltage Continuous Forward Current  Single Pulse Forward Current ‚ Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 200 50 600 125 -55 to +150 Units V A W °C Thermal - Mechanical Characteristics Parameter RθJC Wt Junction-to-Case, Single Leg Conducting Weight Typ. — 2.6 Max. 1.0 — Units °C/W g Note:  D.C. = 50% rect. wave ‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms 4/7/97 HFA50HF20 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR...